IPU13N03LA G
MOSFET N-CH 25V 30A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPU13N03LA-G, is designed for demanding applications. This device features a 25 V drain-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C (Tc), with a maximum power dissipation of 46 W (Tc). The Rds(on) is specified at a maximum of 12.8 mOhm at 30 A and 10 V Vgs. Key characteristics include a gate charge of 8.3 nC (Qg) at 5 V and input capacitance (Ciss) of 1043 pF at 15 V Vds. The IPU13N03LA-G utilizes a through-hole mounting type in a TO-251-3 Short Leads (IPAK) package. This component is suitable for power management solutions across various industries, including automotive and industrial applications. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | P-TO251-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1043 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
