IPU135N08N3 G
MOSFET N-CH 80V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPU135N08N3-G is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 50A at 25°C. The Rds(on) is specified at a maximum of 13.5mOhm at 50A and 10V Vgs. Key parameters include a gate charge (Qg) of 25 nC at 10V and input capacitance (Ciss) of 1730 pF at 40V. The device offers a maximum power dissipation of 79W at 25°C and operates across an extended temperature range of -55°C to 175°C (TJ). Supplied in a PG-TO251-3 package (TO-251-3 Short Leads, IPAK, TO-251AA), this through-hole mounted MOSFET is suitable for use in automotive, industrial power supplies, and renewable energy systems. It supports gate drive voltages from 6V to 10V for optimal Rds(on) performance.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
