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IPU105N03L G

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IPU105N03L G

MOSFET N-CH 30V 35A TO251-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' OptiMOS™ IPU105N03L-G is an N-Channel Power MOSFET designed for demanding applications requiring efficient power switching. This device features a 30V drain-source voltage and a continuous drain current capability of 35A at 25°C, with a maximum power dissipation of 38W. The low on-resistance of 10.5mOhm at 30A and 10V gate-source voltage, coupled with a gate charge of 14 nC, contributes to reduced switching losses. Operating across a temperature range of -55°C to 175°C, the IPU105N03L-G utilizes TO-251-3 (IPAK) through-hole mounting for robust thermal management. It is commonly employed in automotive, industrial power supplies, and motor control systems where high efficiency and reliability are critical. The device supports a gate drive voltage range from 4.5V to 10V and has a maximum gate-source voltage of ±20V.

Additional Information

Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs10.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)38W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackagePG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 15 V

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