IPU103N08N3 G
MOSFET N-CH 80V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, IPU103N08N3-G, features an 80 V drain-source voltage rating and a continuous drain current capability of 50 A at 25°C (Tc). This device offers a low on-resistance of 10.3 mOhm maximum at 46 A and 10 V Vgs. With a maximum power dissipation of 100 W (Tc), it is suitable for demanding applications. The IPU103N08N3-G utilizes a PG-TO251-3 package with through-hole mounting. Key parameters include a gate charge of 35 nC (max) at 10 V and input capacitance of 2410 pF (max) at 40 V. Operating temperature ranges from -55°C to 175°C (TJ). This component finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.3mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V |
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