IPU09N03LB G
MOSFET N-CH 30V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPU09N03LB-G is a 30V N-Channel power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 9.3mOhm at 50A and 10V Vgs, enabling reduced conduction losses. With a continuous drain current of 50A (Tc) and a maximum power dissipation of 58W (Tc), it is suitable for demanding thermal environments. The device operates across a wide temperature range from -55°C to 175°C (TJ) and is housed in a PG-TO251-3-21 package, also known as IPAK, for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 13 nC (max) at 5V Vgs and input capacitance (Ciss) of 1600 pF (max) at 15V Vds. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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