IPU09N03LA G
MOSFET N-CH 25V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPU09N03LA-G, offers a 25V drain-source voltage and 50A continuous drain current at 25°C (Tc). This through-hole mounted device features a low Rds(on) of 8.8mOhm at 30A and 10V Vgs, enabled by its advanced MOSFET technology. The IPU09N03LA-G has a maximum power dissipation of 63W (Tc) and a gate charge of 13nC at 5V. With a wide operating temperature range of -55°C to 175°C (TJ), this component is suitable for demanding applications in automotive and industrial power management sectors. It is supplied in a PG-TO251-3-21 package.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1642 pF @ 15 V |
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