IPU090N03L G
MOSFET N-CH 30V 40A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPU090N03L-G is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 30V. This component offers a continuous drain current (Id) of 40A at 25°C and a maximum power dissipation of 42W (Tc). The low on-resistance (Rds On) is specified at 9mOhm maximum at 30A and 10V Vgs. Key parameters include a gate charge (Qg) of 15nC maximum at 10V Vgs and input capacitance (Ciss) of 1600pF maximum at 15V Vds. It supports a gate-source voltage (Vgs) range of ±20V and features a threshold voltage (Vgs(th)) of 2.2V maximum at 250µA. The device is housed in a PG-TO251-3 package, suitable for through-hole mounting, and operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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