IPU07N03LA
MOSFET N-CH 25V 30A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IPU07N03LA is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 30A at 25°C, with a maximum power dissipation of 83W (Tc). The Rds On is specified at a low 6.5mOhm at 30A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 22 nC at 5V and input capacitance (Ciss) of 2653 pF at 15V. The device supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. With a threshold voltage (Vgs(th)) of 2V at 40µA, it operates within a temperature range of -55°C to 175°C (TJ). The IPU07N03LA is housed in a TO-251-3 Short Leads (IPAK) package, suitable for through-hole mounting. This MOSFET is commonly utilized in automotive, industrial power supplies, and battery management systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | P-TO251-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2653 pF @ 15 V |
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