IPU075N03L G
MOSFET N-CH 30V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' OptiMOS™ series N-Channel Power MOSFET, part number IPU075N03L-G, offers a 30V drain-source voltage capability. This through-hole component, packaged in a TO-251-3 configuration, delivers a continuous drain current of 50A at 25°C and a maximum power dissipation of 47W. Key electrical characteristics include a low on-resistance of 7.5mOhm at 30A and 10V, with a gate charge of 18nC at 10V. The device features a threshold voltage of 2.2V at 250µA and supports gate-source voltages up to ±20V. Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics applications requiring robust power switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 15 V |
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