IPU06N03LB G
MOSFET N-CH 30V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPU06N03LB-G. This device features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 50 A at 25°C (Tc). The Rds(on) is specified at a maximum of 6.3 mOhm at 50 A and 10 V, with a gate drive requirement ranging from 4.5 V to 10 V. Key parameters include a maximum gate charge (Qg) of 22 nC at 5 V and input capacitance (Ciss) of 2800 pF at 15 V. The device offers a power dissipation of 94 W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). The IPU06N03LB-G is supplied in a PG-TO251-3 package, designed for through-hole mounting, and is available in tube packaging. This component is commonly employed in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V |
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