IPU06N03LAGXK
MOSFET N-CH 25V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPU06N03LAGXK is an N-Channel Power MOSFET with a 25V drain-source voltage and a continuous drain current of 50A at 25°C (Tc). This device features a low on-resistance of 5.9mOhm maximum at 30A and 10V Vgs, with a gate charge of 22 nC maximum at 5V Vgs. The input capacitance (Ciss) is specified at 2653 pF maximum at 15V Vds. Optimized for industrial applications, this MOSFET is housed in a P-TO251-3-1 (IPAK) package suitable for through-hole mounting. It offers a maximum power dissipation of 83W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Applications include power supplies, motor control, and power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | P-TO251-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2653 pF @ 15 V |
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