IPU060N03L G
MOSFET N-CH 30V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPU060N03L-G is a 30V N-Channel power MOSFET designed for demanding applications. This component features a low on-resistance of 6mOhm at 30A and 10V Vgs, facilitating efficient power transfer. It offers a continuous drain current of 50A (Tc) and a maximum power dissipation of 56W (Tc). The device is packaged in a PG-TO251-3 (IPAK) for through-hole mounting. Key electrical characteristics include a gate charge of 23 nC at 10V and input capacitance of 2400 pF at 15V. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |
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