IPU050N03L G
MOSFET N-CH 30V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPU050N03L-G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C case temperature, with a maximum power dissipation of 68W. The device exhibits a low on-resistance of 5mOhm at 30A and 10V Vgs. It operates with gate drive voltages ranging from 4.5V to 10V and has a typical gate charge of 31nC at 10V. The input capacitance (Ciss) is rated at a maximum of 3200pF at 15V. The IPU050N03L-G is housed in a PG-TO251-3-21 package, commonly known as TO251AA or IPAK, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C. This MOSFET is utilized in various sectors including automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-21 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V |
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