IPTG210N25NM3FDATMA1
TRENCH >=100V PG-HSOG-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IPTG210N25NM3FDATMA1, from the OptiMOS™ 3 series. This device offers a 250 V drain-source voltage and is packaged in a PG-HSOG-8-1 surface mount configuration. Key electrical characteristics include a maximum on-resistance of 21 mOhm at 69A and 10V Vgs, with a continuous drain current capability of 77A at 25°C case temperature. The device features a gate charge of 81 nC at 10V and input capacitance of 7000 pF at 125V. With a maximum power dissipation of 375W at 25°C case temperature, this MOSFET is suitable for demanding applications across various industries, including automotive and industrial power control. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: OptiMOS™ 3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta), 77A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 267µA |
| Supplier Device Package | PG-HSOG-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 125 V |
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