IPTG111N20NM3FDATMA1
TRENCH >=100V PG-HSOG-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 3 N-Channel Power MOSFET, part number IPTG111N20NM3FDATMA1, is designed for high-efficiency power conversion applications. This surface mount device features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 10.8 A at ambient temperature (Ta) and 108 A at case temperature (Tc). The Rds On is specified at a maximum of 11.1 mOhm at 96 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 81 nC and input capacitance (Ciss) of 7000 pF at 100 V. The device operates within an ambient temperature range of -55°C to 175°C (TJ) and dissipates up to 3.8 W (Ta) or 375 W (Tc). The component is housed in a PG-HSOG-8-1 (8-PowerSMD, Gull Wing) package and supplied on tape and reel. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: OptiMOS™ 3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.8A (Ta), 108A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 96A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 267µA |
| Supplier Device Package | PG-HSOG-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 100 V |
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