IPTG063N15NM5ATMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPTG063N15NM5ATMA1, an N-Channel OptiMOS™ 5 series power MOSFET. This surface mount device features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current capability of 16.2A at 25°C ambient or 122A at 25°C case temperature. Its low on-resistance is specified at a maximum of 6.3mOhm at 50A and 10V Vgs. The device boasts a gate charge (Qg) of 63 nC at 10 V and an input capacitance (Ciss) of 4800 pF at 75 V. With a maximum power dissipation of 3.8W (ambient) or 214W (case), and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications. The PG-HSOG-8 package facilitates efficient thermal management. This component is commonly utilized in automotive and industrial power supply applications.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.2A (Ta), 122A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 163µA |
| Supplier Device Package | PG-HSOG-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 75 V |
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