IPTG054N15NM5ATMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPTG054N15NM5ATMA1 is an N-Channel Power MOSFET from the OptiMOS™ 5 series. This component features a drain-source voltage (Vdss) of 150V and offers a low on-resistance (Rds On) of 5.4mOhm at a continuous drain current (Id) of 50A and gate-source voltage (Vgs) of 10V. It supports a continuous drain current of 17.5A at 25°C ambient temperature and 143A at 25°C case temperature. Maximum power dissipation is 3.8W (Ta) and 250W (Tc). The device is supplied in a PG-HSOG-8 package, suitable for surface mounting, and is delivered on tape and reel. Key parameters include gate charge (Qg) of 73nC (max) at 10V Vgs and input capacitance (Ciss) of 5700pF (max) at 75V Vds. This MOSFET is utilized in applications such as power supplies, motor control, and automotive systems. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 143A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 191µA |
| Supplier Device Package | PG-HSOG-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 75 V |
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