IPTG044N15NM5ATMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPTG044N15NM5ATMA1 is an N-Channel Power MOSFET from the OptiMOS™ 5 series. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 19.4A at 25°C (ambient) and 174A at 25°C (case). The Rds(On) is specified at a maximum of 4.4mOhm at 50A and 10V gate drive. With a maximum power dissipation of 3.8W (ambient) and 300W (case), this MOSFET is suitable for demanding applications. Key parameters include a gate charge (Qg) of 89 nC at 10V and input capacitance (Ciss) of 7000 pF at 75V. The device is supplied in a PG-HSOG-8 package, designed for surface mounting, and is available on tape and reel. This component finds application in power supply units, industrial motor control, and automotive systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.4A (Ta), 174A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 235µA |
| Supplier Device Package | PG-HSOG-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 75 V |
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