IPTG039N15NM5ATMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 N-Channel Power MOSFET, part number IPTG039N15NM5ATMA1, offers a 150 V drain-source voltage. This device features a low Rds(on) of 3.9 mOhm at 50 A and 10 V gate-source voltage. With a continuous drain current of 21 A at 25°C ambient and 190 A at 25°C case temperature, it supports high power applications with a maximum power dissipation of 3.8 W (ambient) and 319 W (case). The IPTG039N15NM5ATMA1 is housed in an 8-PowerSMD, Gull Wing (PG-HSOG-8) package, suitable for surface mounting. Key parameters include a gate charge of 93 nC at 10 V and input capacitance of 7300 pF at 75 V. Its operating temperature range is -55°C to 175°C. This component is utilized in power supply, motor control, and automotive applications.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 319W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 243µA |
| Supplier Device Package | PG-HSOG-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 75 V |
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