IPTG018N08NM5ATMA1
TRENCH 40<-<100V PG-HSOG-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPTG018N08NM5ATMA1 is an N-Channel Power MOSFET featuring a 80V drain-source voltage and a continuous drain current of 32A at 25°C ambient, scaling to 253A under thermal management. This device offers a low on-resistance of 1.8mOhm at 150A and 10V Vgs. The IPTG018N08NM5ATMA1 utilizes TRENCH technology for enhanced performance and is housed in a PG-HSOG-8-1 package, suitable for surface mounting. Key electrical characteristics include a gate charge of 127nC at 10V Vgs and input capacitance of 9200pF at 40V Vds. The maximum power dissipation is rated at 3.8W ambient and 231W case. This component is designed for demanding applications across automotive and industrial power conversion sectors. It operates within a junction temperature range of -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Gull Wing |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 253A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 150A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 231W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 159µA |
| Supplier Device Package | PG-HSOG-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 40 V |
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