IPTC063N15NM5ATMA1
OPTIMOS 5 POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPTC063N15NM5ATMA1, an N-Channel OptiMOS™ 5 series power MOSFET, offers a 150V drain-source voltage. This surface mount component features a low Rds(on) of 6.3mOhm at 50A and 10V Vgs. Continuous drain current is rated at 16.2A (Ta) and 122A (Tc), with a maximum power dissipation of 3.8W (Ta) and 214W (Tc). Key parameters include a gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 4800 pF at 75V. The device operates within a temperature range of -55°C to 175°C (TJ). Supplied in PG-HDSOP-16-2 packaging on tape and reel, this MOSFET is suitable for applications in automotive and industrial sectors requiring high-efficiency power switching.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-PowerSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.2A (Ta), 122A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 163µA |
| Supplier Device Package | PG-HDSOP-16-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 75 V |
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