IPTC054N15NM5ATMA1
OPTIMOS 5 POWER MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPTC054N15NM5ATMA1, an N-Channel OptiMOS™ 5 power MOSFET. This component offers a drain-source voltage of 150V and features a low on-resistance of 5.4mOhm at 50A and 10V Vgs. It is rated for continuous drain current of 17.5A (Ta) and 143A (Tc), with a maximum power dissipation of 3.8W (Ta) and 250W (Tc). The device is housed in a PG-HDSOP-16-2 package for surface mounting and operates across a temperature range of -55°C to 175°C. Key electrical characteristics include a maximum gate charge of 73 nC at 10V and an input capacitance of 5700 pF at 75V. This MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-PowerSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 143A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 191µA |
| Supplier Device Package | PG-HDSOP-16-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 75 V |
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