IPTC015N10NM5ATMA1
MOSFET N-CH 100V 35A/354A HDSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 IPTC015N10NM5ATMA1 is an N-channel power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 35A at 25°C ambient, scaling to 354A under pulsed or specific thermal conditions. This device offers a low on-resistance of 1.5mOhm at 100A and 10V Vgs. Key parameters include a gate charge of 208 nC (max) at 10V and input capacitance of 16000 pF (max) at 50V. The maximum power dissipation is rated at 3.8W (Ta) and 375W (Tc). Designed for surface mounting, it is housed in a PG-HDSOP-16-2 package and operates within an extended temperature range of -55°C to 175°C. This component is suitable for demanding applications in power supply, motor control, and industrial automation sectors.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-PowerSOP Module |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 354A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 275µA |
| Supplier Device Package | PG-HDSOP-16-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 208 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 50 V |
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