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IPTC012N08NM5ATMA1

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IPTC012N08NM5ATMA1

MOSFET N-CH 80V 40A/396A HDSOP

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ 5 IPTC012N08NM5ATMA1 is a high-performance N-Channel MOSFET designed for demanding applications. This device features an 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at ambient temperature and 396A at case temperature (25°C). Its low on-resistance (Rds On) is rated at a maximum of 1.2mOhm at 100A and 10V Vgs. The IPTC012N08NM5ATMA1 offers a significant power dissipation capability of 3.8W at ambient and 375W at case temperature. Key parameters include a gate charge (Qg) of 219 nC (Max) at 10V and input capacitance (Ciss) of 16000 pF (Max) at 40V. The MOSFET is housed in a PG-HDSOP-16-2 package suitable for surface mounting and operates within a temperature range of -55°C to 175°C (TJ). This component is utilized in power management, automotive, and industrial sectors.

Additional Information

Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case16-PowerSOP Module
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Ta), 396A (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id3.8V @ 275µA
Supplier Device PackagePG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs219 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16000 pF @ 40 V

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