IPT65R195G7XTMA1
MOSFET N-CH 650V 14A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPT65R195G7XTMA1 is a CoolMOS™ C7 series N-channel power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 14A at 25°C (Tc), with a maximum power dissipation of 97W (Tc). The on-resistance (Rds On) is specified at a maximum of 195mOhm at 4.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 20 nC (max) at 10V and input capacitance (Ciss) of 996 pF (max) at 400V. The MOSFET is housed in a PG-HSOF-8-2 package for surface mounting, suitable for demanding environments with an operating temperature range of -55°C to 150°C (TJ). This component is widely utilized in power supply, server, and industrial motor drive applications where efficiency and reliability are paramount.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 97W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | PG-HSOF-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 996 pF @ 400 V |
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