IPT65R105G7XTMA1
MOSFET N-CH 650V 24A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPT65R105G7XTMA1 is a 650V N-channel CoolMOS™ C7 series power MOSFET. This device features a low on-resistance of 105mOhm at 8.9A and 10V Vgs, with a continuous drain current of 24A (Tc) at 25°C. The IPT65R105G7XTMA1 offers a maximum power dissipation of 156W (Tc) and is housed in a PG-HSOF-8-2 package for surface mounting. Key parameters include a gate charge of 35nC (max) at 10V Vgs and an input capacitance of 1670pF (max) at 400V Vds. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in server power supplies, industrial power supplies, and solar inverters.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 8.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 440µA |
| Supplier Device Package | PG-HSOF-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD65R225C7ATMA1
MOSFET N-CH 650V 11A TO252-3
IPL65R070C7AUMA1
MOSFET N-CH 650V 28A 4VSON
IPB65R045C7ATMA2
MOSFET N-CH 650V 46A TO263-3
