IPT65R033G7XTMA1
MOSFET N-CH 650V 69A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPT65R033G7XTMA1 is a CoolMOS™ C7 series N-Channel Power MOSFET. This device offers a 650 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 69 A at 25°C (Tc). With a low on-resistance (Rds On) of 33 mOhm at 28.9 A and 10 V, it provides efficient power handling. The device features a maximum power dissipation of 391 W (Tc) and a gate charge (Qg) of 110 nC at 10 V. Designed for surface mounting, it utilizes the PG-HSOF-8-2 package (also known as 8-PowerSFN). This component is suitable for applications in power factor correction, server power, solar inverters, and industrial power supplies.
Additional Information
Series: CoolMOS™ C7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 28.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.44mA |
| Supplier Device Package | PG-HSOF-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 400 V |
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