IPT60R150G7XTMA1
MOSFET N-CH 600V 17A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPT60R150G7XTMA1 is a 600V N-Channel Power MOSFET from the CoolMOS™ G7 series. This component features a low on-resistance of 150mOhm at 5.3A and 10V Vgs, with a maximum gate charge of 23 nC at 10V. The device offers a continuous drain current of 17A (Tc) and a maximum power dissipation of 106W (Tc). Fabricated using MOSFET technology, it is presented in a PG-HSOF-8-2 (8-PowerSFN) surface mount package, supplied on tape and reel. This component is suitable for demanding applications in power factor correction (PFC), server and telecom power supplies, and industrial power systems.
Additional Information
Series: CoolMOS™ G7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 260µA |
| Supplier Device Package | PG-HSOF-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 902 pF @ 400 V |
Request a Quote
Clients Also Buy
IPT60R050G7XTMA1
MOSFET N-CH 600V 44A 8HSOF
IPT60R028G7XTMA1
MOSFET N-CH 600V 75A 8HSOF
IPDD60R080G7XTMA1
MOSFET N-CH 600V 29A HDSOP-10
