IPT60R145CFD7XTMA1
MOSFET N-CH 600V 19A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPT60R145CFD7XTMA1 is a 600V N-Channel MOSFET from the CoolMOS™ CFD7 series. This device features a low on-resistance of 145mOhm at 6A and 10V gate drive. With a continuous drain current of 19A (Tc) and a maximum power dissipation of 116W (Tc), it is suitable for demanding applications. The MOSFET offers a gate charge of 28 nC (max) and an input capacitance of 1199 pF (max) at 400V. It is provided in a PG-HSOF-8-2 package, designed for surface mounting and supplied on tape and reel. This component is utilized in power supply units, server power, industrial applications, and electric vehicle charging infrastructure.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 116W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Supplier Device Package | PG-HSOF-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1199 pF @ 400 V |
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