IPT210N25NFDATMA1
MV POWER MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 3 IPT210N25NFDATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 250 V drain-source voltage and a continuous drain current of 69 A at 25°C (Tc), with a maximum power dissipation of 375 W (Tc). The low on-resistance of 21 mOhm at 69 A and 10 V gate-source voltage is achieved through advanced MOSFET technology. Key parameters include a gate charge (Qg) of 86 nC at 10 V and input capacitance (Ciss) of 7000 pF at 125 V. The IPT210N25NFDATMA1 is housed in an 8-PowerSFN PG-HSOF-8-1 package for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This device is suitable for use in areas such as industrial power supplies, electric vehicle charging, and motor control systems.
Additional Information
Series: OptiMOS™ 3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 267µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 125 V |
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