IPT111N20NFDATMA1
MOSFET N-CH 200V 96A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPT111N20NFDATMA1 is an N-channel Power MOSFET designed for high-performance applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 96A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 11.1mOhm at 96A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 375W (Tc), it is suitable for demanding power management tasks.
The IPT111N20NFDATMA1 utilizes a Metal Oxide semiconductor technology and is housed in a PG-HSOF-8-1 surface mount package, supplied on tape and reel. Key electrical parameters include a maximum gate charge (Qg) of 87 nC at 10V and input capacitance (Ciss) of 7000 pF at 100V. The operating junction temperature range is -55°C to 175°C. This MOSFET is frequently employed in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 96A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 267µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7000 pF @ 100 V |
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