IPT063N15N5ATMA1
TRENCH >=100V PG-HSOF-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPT063N15N5ATMA1, features a 150 V drain-source breakdown voltage (Vdss). This device offers a low on-resistance (Rds On) of 6.3 mOhm at 50 A, 10 V (Vgs), facilitated by its TRENCH technology. Continuous drain current (Id) ratings are 16.2 A at ambient temperature (Ta) and 122 A at case temperature (Tc). Maximum power dissipation is 3.8 W (Ta) and 214 W (Tc). The IPT063N15N5ATMA1 is supplied in a PG-HSOF-8 package for surface mounting and operates across a junction temperature range of -55°C to 175°C. Key parameters include gate charge (Qg) of 59 nC at 10 V (Vgs) and input capacitance (Ciss) of 4550 pF at 75 V (Vds). This MOSFET is suitable for applications in automotive and industrial power systems requiring high efficiency and robust performance.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.2A (Ta), 122A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 153µA |
| Supplier Device Package | PG-HSOF-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4550 pF @ 75 V |
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