IPT039N15N5XTMA1
TRENCH >=100V PG-HSOF-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPT039N15N5XTMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-to-Source Voltage (Vdss) of 150V and a continuous drain current capability of 190A at 25°C (Tc), with a maximum power dissipation of 319W (Tc). The device exhibits a low on-resistance (Rds On) of 3.9mOhm at 50A and 10V, facilitated by its TRENCH technology. Designed for surface mounting, it is supplied in the PG-HSOF-8 package, also known as 8-PowerSFN, on tape and reel. Key parameters include a gate charge (Qg) of 98 nC at 10V and input capacitance (Ciss) of 7700 pF at 75V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for high-power applications in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 190A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 319W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 257µA |
| Supplier Device Package | PG-HSOF-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 75 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
