Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IPT023N10NM5LF2ATMA1

Banner
productimage

IPT023N10NM5LF2ATMA1

IPT023N10NM5LF2ATMA1

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 3.8W (Ta), 300W (Tc) Surface Mount PG-HSOF-8-1

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Supplier Device PackagePG-HSOF-8-1
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 50 V
Qualification-

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BSZ021N04LS6ATMA1

MOSFET N-CH 40V 25A/40A TSDSON

product image
IPP082N10NF2SAKMA1

TRENCH >=100V

product image
IRL3705ZLPBF

MOSFET N-CH 55V 75A TO262