IPT022N10NF2SATMA1
MOSFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 29A (Ta), 236A (Tc) 3.8W (Ta), 250W (Tc) Surface Mount PG-HSOF-8-10
Additional Information
Series: StrongIRFET™ 2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 236A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.25mOhm @ 150A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 250W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 169µA |
| Supplier Device Package | PG-HSOF-8-10 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 50 V |
Request a Quote
Clients Also Buy
IPT017N10NF2SATMA1
MOSFET
IPT012N08NF2SATMA1
MOSFET
IPA082N10NF2SXKSA1
TRENCH >=100V PG-TO220-3
