IPT020N10N3ATMA1
MOSFET N-CH 100V 300A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies IPT020N10N3ATMA1 is an N-channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 300A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 2mOhm at 150A and 10V, with a maximum power dissipation of 375W (Tc). It utilizes surface mount packaging in an 8-PowerSFN (PG-HSOF-8-1) case, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 156 nC (max) at 10V and input capacitance (Ciss) of 11200 pF (max) at 50V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power supply, and electric vehicle charging systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 150A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 272µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11200 pF @ 50 V |
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