IPT017N10NM5LF2ATMA1
IPT017N10NM5LF2ATMA1Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 3.8W (Ta), 375W (Tc) Surface Mount PG-HSOF-8-1
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Supplier Device Package | PG-HSOF-8-1 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 15V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17000 pF @ 50 V |
| Qualification | - |
Request a Quote
Clients Also Buy
IRL3705ZLPBF
MOSFET N-CH 55V 75A TO262
IRF3805STRLPBF
MOSFET N-CH 55V 75A D2PAK
IPB073N15N5ATMA1
MOSFET N-CH 150V 114A TO263-3
