IPT014N10N5ATMA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPT014N10N5ATMA1 is a high-performance Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 362A at 25°C. The IPT014N10N5ATMA1 utilizes Trench MOSFET technology, offering low on-resistance characteristics. It is supplied in a PG-HSOF-8-1 package, suitable for surface mount assembly and delivered on tape and reel. This MOSFET is commonly found in power supply units, electric vehicle charging, and industrial motor control systems. Its robust design and efficient switching capabilities make it a reliable choice for power conversion and management solutions.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 362A |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-HSOF-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 100 V |
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