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IPSA70R950CEAKMA1

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IPSA70R950CEAKMA1

MOSFET N-CH 700V 8.7A TO251-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 700 V 8.7A (Tc) 94W (Tc) Through Hole PG-TO251-3-347

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.7A (Tc)
Rds On (Max) @ Id, Vgs950mOhm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)94W (Tc)
Vgs(th) (Max) @ Id3.5V @ 150µA
Supplier Device PackagePG-TO251-3-347
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)700 V
Gate Charge (Qg) (Max) @ Vgs15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V

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