IPSA70R900P7SAKMA1
MOSFET N-CH 700V 6A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ P7 series N-Channel Power MOSFET, part number IPSA70R900P7SAKMA1, offers a 700V drain-source breakdown voltage. This through-hole device features a continuous drain current of 6A at 25°C and a maximum power dissipation of 30.5W. The Rds(on) is specified at 900mOhm at 1.1A and 10V. Key parameters include a gate charge of 6.8nC at 400V and input capacitance (Ciss) of 211pF at 400V. The device is housed in a TO-251-3 (IPAK) package. This component is suitable for applications in power supplies and industrial motor drives.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 211 pF @ 400 V |
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