IPSA70R750P7SAKMA1
MOSFET N-CH 700V 6.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPSA70R750P7SAKMA1, a CoolMOS™ P7 series N-Channel power MOSFET designed for high-performance applications. This component features a 700V drain-source breakdown voltage and a continuous drain current rating of 6.5A at 25°C case temperature, with a maximum power dissipation of 34.7W (Tc). The device offers a low on-resistance of 750mOhm at 1.4A and 10V gate-source voltage. Key characteristics include a gate charge of 8.3nC (max) at 400V and input capacitance of 306pF (max) at 400V. The IPSA70R750P7SAKMA1 is housed in a TO-251-3 (IPAK) package for through-hole mounting, operating within a temperature range of -40°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34.7W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 306 pF @ 400 V |
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