IPSA70R600P7SAKMA1
MOSFET N-CH 700V 8.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPSA70R600P7SAKMA1. This device offers a 700 V drain-source voltage and a continuous drain current of 8.5 A at 25°C (Tc). Featuring a maximum on-resistance of 600 mOhm at 1.8 A and 10 V, it is designed for efficient power conversion. The MOSFET is housed in a PG-TO251-3 package, suitable for through-hole mounting. Key parameters include a gate charge of 10.5 nC (max) at 400 V and input capacitance of 364 pF (max) at 400 V. It operates within a temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 43.1 W (Tc). This component is utilized in applications such as switch mode power supplies, lighting, and industrial power systems.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43.1W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 364 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
