IPSA70R600CEAKMA1
MOSFET N-CH 700V 10.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPSA70R600CEAKMA1, an N-Channel Power MOSFET, offers a 700V drain-source voltage and a continuous drain current of 10.5A at 25°C. This component features a maximum power dissipation of 86W at 25°C and a low on-resistance of 600mOhm at 1A and 10V. Designed for efficient switching, it has a gate charge of 22 nC and input capacitance of 474 pF at 100V. The MOSFET is housed in a TO-251-3 (IPAK) package with short leads, suitable for through-hole mounting. Its operating temperature range is from -40°C to 150°C. This device is utilized in applications such as power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 474 pF @ 100 V |