IPSA70R450P7SAKMA1
MOSFET N-CH 700V 10A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPSA70R450P7SAKMA1, offers a 700V drain-source voltage and 10A continuous drain current at 25°C (Tc). This device features a maximum on-resistance of 450mOhm at 2.3A and 10V Vgs. With a gate charge of 13.1nC (max) at 400V and input capacitance of 424pF (max) at 400V, it is designed for efficient switching. The MOSFET operates within a temperature range of -40°C to 150°C (TJ) and has a maximum power dissipation of 50W (Tc). Packaged in a TO-251-3 (IPAK) with short leads, this through-hole component is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 120µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.1 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 424 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
