IPSA70R2K0P7SAKMA1
MOSFET N-CH 700V 3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPSA70R2K0P7SAKMA1, offers a 700 V drain-source voltage rating with a continuous drain current of 3 A at 25°C. This device features a maximum on-resistance of 2 O at 500 mA and 10 V gate-source voltage. The IPAK package (TO-251-3 Stub Leads) provides a through-hole mounting solution. Key parameters include a 130 pF input capacitance and 3.8 nC gate charge. The maximum power dissipation is rated at 17.6 W at 25°C case temperature. This MOSFET is suitable for applications in power factor correction, server power supplies, and industrial power systems.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 17.6W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Supplier Device Package | PG-TO251-3-347 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 400 V |
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