IPSA70R1K4P7SAKMA1
MOSFET N-CH 700V 4A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPSA70R1K4P7SAKMA1. This 700V device features a 4A continuous drain current capability at 25°C with a maximum power dissipation of 22.7W (Tc). The on-resistance (Rds On) is specified at a maximum of 1.4 Ohm at 700mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 4.7 nC (max) at 400V and input capacitance (Ciss) of 158 pF (max) at 400V. The MOSFET is housed in a TO-251-3 (IPAK) package with short leads for through-hole mounting. It operates within a junction temperature range of -40°C to 150°C and has a ±16V maximum gate-source voltage. This component is commonly utilized in power supply applications and server power systems.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 700mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22.7W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 158 pF @ 400 V |
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