IPSA70R1K4CEAKMA1
MOSFET N-CH 700V 5.4A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPSA70R1K4CEAKMA1 is an N-Channel MOSFET designed for high-voltage applications. This component offers a drain-source voltage (Vdss) of 700V and a continuous drain current (Id) of 5.4A at 25°C (Tc). The Rds On is specified at a maximum of 1.4 Ohms at 1A and 10V gate-source voltage. Featuring a 10V gate drive, it has a maximum power dissipation of 53W (Tc). Key parameters include input capacitance (Ciss) of 225 pF at 100V and gate charge (Qg) of 10.5 nC at 10V. The device is housed in a PG-TO251-3 package, also known as TO-251-3 Short Leads or IPAK, suitable for through-hole mounting. Operating temperature range is from -40°C to 150°C (TJ). This MOSFET is utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
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