IPS80R900P7AKMA1
MOSFET N-CH 800V 6A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel MOSFET, part number IPS80R900P7AKMA1, offers an 800V drain-source breakdown voltage and 6A continuous drain current at 25°C. This through-hole device features a maximum power dissipation of 45W (Tc) and a low on-resistance of 900mOhm at 2.2A and 10V gate drive. The IPS80R900P7AKMA1 utilizes advanced Superjunction technology for enhanced performance in high-voltage applications. Key parameters include a typical gate charge of 15 nC and input capacitance of 350 pF. This component is suitable for power factor correction (PFC) circuits, switch-mode power supplies (SMPS), and general-purpose high-voltage switching applications. The device is supplied in a PG-TO251-3 package.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 110µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 500 V |
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