IPS80R2K4P7AKMA1
MOSFET N-CH 800V 2.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel Power MOSFET, part number IPS80R2K4P7AKMA1, offers an 800V drain-source voltage with a continuous drain current of 2.5A at 25°C (Tc). This through-hole component, housed in a PG-TO251-3 (IPAK) package, features a maximum on-resistance of 2.4Ohm at 800mA and 10V gate-source voltage. Key parameters include a gate charge of 7.5nC at 10V and input capacitance of 150pF at 500V. The device supports a maximum power dissipation of 22W at 25°C (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units, lighting, and industrial power systems.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 500 V |