IPS80R2K0P7AKMA1
MOSFET N-CH 800V 3A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ P7 series N-channel power MOSFET, part number IPS80R2K0P7AKMA1, offers an 800V drain-source voltage rating with a continuous drain current capability of 3A at 25°C (Tc). This component features a maximum Rds(on) of 2 Ohm at 940mA, 10V gate-source voltage, and requires a 10V drive voltage. The device boasts a low gate charge of 9 nC at 10V and an input capacitance (Ciss) of 175 pF maximum at 500V. With a maximum power dissipation of 24W at 25°C (Tc), it is housed in a TO-251-3 Stub Leads, IPAK package (PG-TO251-3-342) for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is suitable for applications requiring high voltage and efficient switching, commonly found in power supply units and industrial automation.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 940mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 24W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 50µA |
| Supplier Device Package | PG-TO251-3-342 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 500 V |
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